Many researches are devoted to the study of silicon dioxide, a material of great interest for its use in the micro-electronics industry. This paperaims to compare the behavior of electrons and positrons when impinging on silicon dioxide targets in order to investigate the differences and thesimilarities. In particular, the inelastic mean free path, the stopping power, the differential elastic scattering cross-section and the total and transportelastic scattering cross-section of electrons and positrons penetrating in silicon dioxide targets are compared in order to better understand theirinfluence in determining the implantation profiles shapes, the mean range of penetration, the maximum range of penetration and the backscatteringcoefficient as a function of the primary energy of the incident particles.
A comparative study of electron and positron penetration in silicon dioxide
Dapor, Maurizio
2006-01-01
Abstract
Many researches are devoted to the study of silicon dioxide, a material of great interest for its use in the micro-electronics industry. This paperaims to compare the behavior of electrons and positrons when impinging on silicon dioxide targets in order to investigate the differences and thesimilarities. In particular, the inelastic mean free path, the stopping power, the differential elastic scattering cross-section and the total and transportelastic scattering cross-section of electrons and positrons penetrating in silicon dioxide targets are compared in order to better understand theirinfluence in determining the implantation profiles shapes, the mean range of penetration, the maximum range of penetration and the backscatteringcoefficient as a function of the primary energy of the incident particles.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
