In this paper, we present the results of the charge and time characterization performed on our novel 100-channel silicon photomultiplier. We have improved our previous single-photon-avalanche-diode technology in order to set up a working device with outstanding features in terms of single-photon resolving power up to R = 45, a timing resolution down to 100 ps, and photon-detection efficiency of 14% at 420 nm. Tests were performed, and features were measured as a function of the bias voltage and of the incident photon flux. A dedicated data analysis procedure was developed that allows to extract at once the relevant parameters from the amplitude spectra and to determine the timing features.
Characterization of a Novel 100-Channel Silicon Photomultiplier—Part II: Charge and Time
Piazza, Alessandro;
2008-01-01
Abstract
In this paper, we present the results of the charge and time characterization performed on our novel 100-channel silicon photomultiplier. We have improved our previous single-photon-avalanche-diode technology in order to set up a working device with outstanding features in terms of single-photon resolving power up to R = 45, a timing resolution down to 100 ps, and photon-detection efficiency of 14% at 420 nm. Tests were performed, and features were measured as a function of the bias voltage and of the incident photon flux. A dedicated data analysis procedure was developed that allows to extract at once the relevant parameters from the amplitude spectra and to determine the timing features.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
