The fabrication of silicon shallow junction photodiodes is a relevant topic for the detection of blue and near ultraviolet weak photon fluxes. In this paper we present a simple model to calculate the quantum detection efficiency (QDE) of a Geiger mode avalanche photodiode (GMAP) as a function of the dead layer thickness above the junction depletion layer. A comparison between calculated and experimental data is also presented. Moreover, by using the same model, an analysis of the QDE at 420 nm wavelength of conventional GMAPs based on shallow N+/P and P+/N junctions is given.
Quantum Detection Efficiency in Geiger Mode Avalanche Photodiodes
Piazza, Alessandro;
2008-01-01
Abstract
The fabrication of silicon shallow junction photodiodes is a relevant topic for the detection of blue and near ultraviolet weak photon fluxes. In this paper we present a simple model to calculate the quantum detection efficiency (QDE) of a Geiger mode avalanche photodiode (GMAP) as a function of the dead layer thickness above the junction depletion layer. A comparison between calculated and experimental data is also presented. Moreover, by using the same model, an analysis of the QDE at 420 nm wavelength of conventional GMAPs based on shallow N+/P and P+/N junctions is given.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
