Most of the actual applications for RF-MEMS switch require high reliability, but consolidated qualification procedures are still lacking. This paper focuses, in particular, on the role of temperature on the switch reliability from a mechanical point of view, showing how this depends on the switch architecture and membrane material. Double clamped switches are sensitive to buckling, and this is the factor limiting their operational temperature, even though the range exploitable can be wide enough for many applications. Residual stress and thermal expansion coefficient of the mobile membrane are the most important parameters to understand and control this phenomenon. Cantilever switches are less influenced by the temperature in their performances, and have a much wider operational range. Other temperature-related factors are affecting the switch reliability in this case, such as elastic modulus variation, dielectric charging effects and creep.
Influence of temperature on the actuation voltage of RF-MEMS switches
Mulloni, Viviana;Solazzi, Francesco;Ficorella, Francesco;Collini, Amos;Margesin, Benno
2013-01-01
Abstract
Most of the actual applications for RF-MEMS switch require high reliability, but consolidated qualification procedures are still lacking. This paper focuses, in particular, on the role of temperature on the switch reliability from a mechanical point of view, showing how this depends on the switch architecture and membrane material. Double clamped switches are sensitive to buckling, and this is the factor limiting their operational temperature, even though the range exploitable can be wide enough for many applications. Residual stress and thermal expansion coefficient of the mobile membrane are the most important parameters to understand and control this phenomenon. Cantilever switches are less influenced by the temperature in their performances, and have a much wider operational range. Other temperature-related factors are affecting the switch reliability in this case, such as elastic modulus variation, dielectric charging effects and creep.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
