The basic aspects related to the scattering processes, useful for both analytical and Monte Carlo calculation of backscattering and depth distribution of low energy (Eo<_10 keV) electrons impinging on solid targets, are described. After reviewing the scattering mechanisms, our results regarding elastic and inelastic scattering of low energy electrons impinging on SiO2 were reported. The comparison with available experimental data and theoretical results show a general good agreement.

Slow Electrons Impinging on Dielectric Systems: I. Basic Aspects

Dapor, Maurizio;
1997-01-01

Abstract

The basic aspects related to the scattering processes, useful for both analytical and Monte Carlo calculation of backscattering and depth distribution of low energy (Eo<_10 keV) electrons impinging on solid targets, are described. After reviewing the scattering mechanisms, our results regarding elastic and inelastic scattering of low energy electrons impinging on SiO2 were reported. The comparison with available experimental data and theoretical results show a general good agreement.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/1328
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