Modeling of critical dimensions scanning electron microscopy with sub-nanometer uncertainty is required to provide a metrics and to avoid yield loss in the processing of advanced CMOS technologies. In this paper, a new approach is proposed, which includes a new Monte Carlo scheme, a new Monte Carlo code, as well as the coupling with electrostatic fields to take into account self-charging effects.
Modeling secondary electron images for linewidth measurement by critical dimension scanning electron microscopy
Dapor, Maurizio;
2010-01-01
Abstract
Modeling of critical dimensions scanning electron microscopy with sub-nanometer uncertainty is required to provide a metrics and to avoid yield loss in the processing of advanced CMOS technologies. In this paper, a new approach is proposed, which includes a new Monte Carlo scheme, a new Monte Carlo code, as well as the coupling with electrostatic fields to take into account self-charging effects.File in questo prodotto:
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