Giubertoni, Damiano
Giubertoni, Damiano
MNF
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers
2010-01-01 D., Ingerle; Meirer, Florian; N., Zoeger; Pepponi, Giancarlo; Giubertoni, Damiano; G., Steinhauser; P., Wobrauschek; C., Streli
Activated dopant effect on low energy SIMS depth profiling
2005-01-01 Barozzi, Mario; Giubertoni, Damiano; S., Pederzoli; Anderle, Mariano; Iacob, Erica; Bersani, Massimo
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing
2006-01-01 Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo; Gennaro, Salvatore; F., D`acapito; R., Doherty; M., Foad
An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing
2006-01-01 Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo; Gennaro, Salvatore; F., D'Acapito; R., Doherty; M. A., Foad
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09)
2009-01-01 B. O., Kolbesen; C., Claeys; L., Fabry; Bersani, Massimo; Giubertoni, Damiano; Pepponi, Giancarlo
Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione
2000-01-01 Bersani, Massimo; M., Sbetti; Lazzeri, Paolo; Giubertoni, Damiano; Barozzi, Mario; Iacob, Erica; Vanzetti, Lia Emanuela; Anderle, Mariano
Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers
2012-01-01 Demenev, Evgeny; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; E., Hourdakis; A. G., Nassiopoulou; M. A., Reading; J. A., van den Berg
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack
2004-01-01 Barozzi, Mario; Giubertoni, Damiano; Anderle, Mariano; Bersani, Massimo
Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments
2002-01-01 Bersani, Massimo; Lazzeri, Paolo; Giubertoni, Damiano; Barozzi, Mario; Marchi E., Boscolo; Anderle, Mariano
Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments
2002-01-01 Giubertoni, Damiano; Barozzi, Mario; Lazzeri, Paolo; Anderle, Mariano; Bersani, Massimo
Arsenic uphill diffusion during shallow junction formation
2006-01-01 M., Ferri; S., Solmi; A., Parisini; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario
As ultra shallow depth profiling: comparison between SIMS and MEIS techniques
2004-01-01 Giubertoni, Damiano; Barozzi, Mario; S., Pederzoli; Anderle, Mariano; Bersani, Massimo; J. A., van den Berg; M., Werner
Binder-free nanostructured germanium anode for high resilience lithium-ion battery
2022-01-01 Fugattini, S.; Gulzar, U.; Andreoli, A.; Carbone, L.; Boschetti, M.; Bernardoni, P.; Gjestila, M.; Mangherini, G.; Camattari, R.; Li, T.; Monaco, S.; Ricci, M.; Liang, S.; Giubertoni, D.; Pepponi, G.; Bellutti, P.; Ferroni, M.; Ortolani, L.; Morandi, V.; Vincenzi, D.; Zaccaria, R. Proietti
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink
2007-01-01 Justin, Hamilton; K. J., Kirkby; Nick, Cowern; Eric, Collart; Bersani, Massimo; Giubertoni, Damiano; Gennaro, Salvatore; A., Parisini
Boron pile-up phenomena during ultra shallow junction formation
2007-01-01 M., Ferri; Sandro, Solmi; Giubertoni, Damiano; Bersani, Massimo; Justin, Hamilton; Max, Kah; Nick, Cowern; K. J., Kirkby; Eric, Collart
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage
2006-01-01 Bersani, Massimo; Giubertoni, Damiano; Iacob, Erica; Barozzi, Mario; S., Pederzoli; Vanzetti, Lia Emanuela; M., Anderle
Boron ultra low energy SIMS depth profiling improved by rotating stage
2005-01-01 Giubertoni, Damiano; Iacob, Erica; Barozzi, Mario; S., Pederzoli; Vanzetti, Lia Emanuela; Anderle, Mariano; Bersani, Massimo
Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam
2003-01-01 Giubertoni, Damiano; Barozzi, Mario; E., Boscolo; M., Anderle; Bersani, Massimo
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon
2012-01-01 Demenev, Evgeny; Giubertoni, Damiano; J., van den Berg; M., Reading; Bersani, Massimo
Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon
2013-01-01 Demenev, Evgeny; Giubertoni, Damiano; M. A., Reading; P., Bailey; T. C. Q., Noakes; Bersani, Massimo; J. A., van den Berg
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers | 1-gen-2010 | D., Ingerle; Meirer, Florian; N., Zoeger; Pepponi, Giancarlo; Giubertoni, Damiano; G., Steinhauser; P., Wobrauschek; C., Streli | |
| Activated dopant effect on low energy SIMS depth profiling | 1-gen-2005 | Barozzi, Mario; Giubertoni, Damiano; S., Pederzoli; Anderle, Mariano; Iacob, Erica; Bersani, Massimo | |
| An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing | 1-gen-2006 | Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo; Gennaro, Salvatore; F., D`acapito; R., Doherty; M., Foad | |
| An EXAFS investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing | 1-gen-2006 | Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo; Gennaro, Salvatore; F., D'Acapito; R., Doherty; M. A., Foad | |
| Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) | 1-gen-2009 | B. O., Kolbesen; C., Claeys; L., Fabry; Bersani, Massimo; Giubertoni, Damiano; Pepponi, Giancarlo | |
| Applicazioni della spettrometria di massa a materiali e tecniche di ultima generazione | 1-gen-2000 | Bersani, Massimo; M., Sbetti; Lazzeri, Paolo; Giubertoni, Damiano; Barozzi, Mario; Iacob, Erica; Vanzetti, Lia Emanuela; Anderle, Mariano | |
| Arsenic redistribution after solid phase epitaxial regrowth of shallow pre-amorphized silicon layers | 1-gen-2012 | Demenev, Evgeny; Giubertoni, Damiano; Gennaro, Salvatore; Bersani, Massimo; E., Hourdakis; A. G., Nassiopoulou; M. A., Reading; J. A., van den Berg | |
| Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack | 1-gen-2004 | Barozzi, Mario; Giubertoni, Damiano; Anderle, Mariano; Bersani, Massimo | |
| Arsenic shallow implant characterization by magnetic sector and time of flight SIMS instruments | 1-gen-2002 | Bersani, Massimo; Lazzeri, Paolo; Giubertoni, Damiano; Barozzi, Mario; Marchi E., Boscolo; Anderle, Mariano | |
| Arsenic Shallow Implant Characterization by Magnetic Sector and TOF-SIMS Instruments | 1-gen-2002 | Giubertoni, Damiano; Barozzi, Mario; Lazzeri, Paolo; Anderle, Mariano; Bersani, Massimo | |
| Arsenic uphill diffusion during shallow junction formation | 1-gen-2006 | M., Ferri; S., Solmi; A., Parisini; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario | |
| As ultra shallow depth profiling: comparison between SIMS and MEIS techniques | 1-gen-2004 | Giubertoni, Damiano; Barozzi, Mario; S., Pederzoli; Anderle, Mariano; Bersani, Massimo; J. A., van den Berg; M., Werner | |
| Binder-free nanostructured germanium anode for high resilience lithium-ion battery | 1-gen-2022 | Fugattini, S.; Gulzar, U.; Andreoli, A.; Carbone, L.; Boschetti, M.; Bernardoni, P.; Gjestila, M.; Mangherini, G.; Camattari, R.; Li, T.; Monaco, S.; Ricci, M.; Liang, S.; Giubertoni, D.; Pepponi, G.; Bellutti, P.; Ferroni, M.; Ortolani, L.; Morandi, V.; Vincenzi, D.; Zaccaria, R. Proietti | |
| Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink | 1-gen-2007 | Justin, Hamilton; K. J., Kirkby; Nick, Cowern; Eric, Collart; Bersani, Massimo; Giubertoni, Damiano; Gennaro, Salvatore; A., Parisini | |
| Boron pile-up phenomena during ultra shallow junction formation | 1-gen-2007 | M., Ferri; Sandro, Solmi; Giubertoni, Damiano; Bersani, Massimo; Justin, Hamilton; Max, Kah; Nick, Cowern; K. J., Kirkby; Eric, Collart | |
| Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage | 1-gen-2006 | Bersani, Massimo; Giubertoni, Damiano; Iacob, Erica; Barozzi, Mario; S., Pederzoli; Vanzetti, Lia Emanuela; M., Anderle | |
| Boron ultra low energy SIMS depth profiling improved by rotating stage | 1-gen-2005 | Giubertoni, Damiano; Iacob, Erica; Barozzi, Mario; S., Pederzoli; Vanzetti, Lia Emanuela; Anderle, Mariano; Bersani, Massimo | |
| Boron ultra shallow SIMS profiles optimization using oblique incidence oxygen beam | 1-gen-2003 | Giubertoni, Damiano; Barozzi, Mario; E., Boscolo; M., Anderle; Bersani, Massimo | |
| Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon | 1-gen-2012 | Demenev, Evgeny; Giubertoni, Damiano; J., van den Berg; M., Reading; Bersani, Massimo | |
| Calibration correction of ultra low energy SIMS profiles based on MEIS analysis of shallow arsenic implants in silicon | 1-gen-2013 | Demenev, Evgeny; Giubertoni, Damiano; M. A., Reading; P., Bailey; T. C. Q., Noakes; Bersani, Massimo; J. A., van den Berg |