Temperature effects on ion-sensitive field-effect transistor (ISFETs) are investigated both from theoretical and experimental point of view. An ISFET model has been implemented into a modified version of SPICE and the effects of temperature on the device behaviour over a user-defined range of pH and temperature have been simulated. The simulated and measured results are then compared and discussed.
Temperature effects on the ISFET behaviour: simulations and measurements
Lorenzelli, Leandro;Conci, Paolo;Lui, Alberto
1998-01-01
Abstract
Temperature effects on ion-sensitive field-effect transistor (ISFETs) are investigated both from theoretical and experimental point of view. An ISFET model has been implemented into a modified version of SPICE and the effects of temperature on the device behaviour over a user-defined range of pH and temperature have been simulated. The simulated and measured results are then compared and discussed.File in questo prodotto:
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