This work reports on the electrical as well as the optical characterizations of a prototype matrix of Silicon PhotoMultipliers (SiPM). The electrical test consists of the measurement of the static (breakdown voltage, quenching resistance, post-breakdown dark current) as well as the dynamic characteristics (gain, dark count rate). The optical test consists of the estimation of the photon detection efficiency as a function of wavelength as well as operation voltage.

Characterization of a prototype matrix of Silicon PhotoMultipliers

Boscardin, Maurizio;Melchiorri, Mirko;Piemonte, Claudio;Tarolli, Alessandro;Zorzi, Nicola
2009

Abstract

This work reports on the electrical as well as the optical characterizations of a prototype matrix of Silicon PhotoMultipliers (SiPM). The electrical test consists of the measurement of the static (breakdown voltage, quenching resistance, post-breakdown dark current) as well as the dynamic characteristics (gain, dark count rate). The optical test consists of the estimation of the photon detection efficiency as a function of wavelength as well as operation voltage.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/5330
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