A single-photon avalanche diode-based pixel array for the analysis of fluorescence phenomena is presented. Each 180 times 150 - um2 pixel integrates a single photon detector combined with an active quenching circuit and a 17-bit digital events counter. On-chip master logic provides the digital control phases required by the pixel array with a full programmability of the main timing synchronisms. The pixel exhibits an average dark count rate of 3 kcps and a dynamic range of over 120-dB in time uncorrelated operation. A complete characterization of the single photon avalanche diode characteristics is reported. Time-resolved fluorescence measurements have been demonstrated by detecting the fluorescence decay of quantum-dot samples without the aid of any optical filters for excitation laser light cutoff.

Single-Photon Avalanche Diode CMOS Sensor for Time-Resolved Fluorescence Measurements

Stoppa, David;Mosconi, Daniel;Pancheri, Lucio;Gonzo, Lorenzo
2009-01-01

Abstract

A single-photon avalanche diode-based pixel array for the analysis of fluorescence phenomena is presented. Each 180 times 150 - um2 pixel integrates a single photon detector combined with an active quenching circuit and a 17-bit digital events counter. On-chip master logic provides the digital control phases required by the pixel array with a full programmability of the main timing synchronisms. The pixel exhibits an average dark count rate of 3 kcps and a dynamic range of over 120-dB in time uncorrelated operation. A complete characterization of the single photon avalanche diode characteristics is reported. Time-resolved fluorescence measurements have been demonstrated by detecting the fluorescence decay of quantum-dot samples without the aid of any optical filters for excitation laser light cutoff.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/5106
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