Boron marker-layer structures have been used to analyze the evolution of Boron-Interstitial clusters (BICs) formed during transient enhanced diffusion (TED). Our approach is based on the measure of B activation by spreading resistance profiling (SRP) after annealing of Si implantation damage. We investigated a wide range of implant conditions in terms of defect densities, ranging from a very dilute interstitial cascade up to the amorphization threshold of Si. We found a common behavior of BICs in terms of trapping and release processes of B atoms. The BICs density as a function of time for different concentration ratios of I and B has been determined
The electrical activation of B in the presence of boron-interstitials clusters
Bersani, Massimo
2002-01-01
Abstract
Boron marker-layer structures have been used to analyze the evolution of Boron-Interstitial clusters (BICs) formed during transient enhanced diffusion (TED). Our approach is based on the measure of B activation by spreading resistance profiling (SRP) after annealing of Si implantation damage. We investigated a wide range of implant conditions in terms of defect densities, ranging from a very dilute interstitial cascade up to the amorphization threshold of Si. We found a common behavior of BICs in terms of trapping and release processes of B atoms. The BICs density as a function of time for different concentration ratios of I and B has been determinedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
