A novel prototype of low-power thick-film gas sensor deposited by screen-printing onto a micromachined hotplate is presented. The micro-heater is designed to maintain a film temperature of 400°C with less than 30mW of input power. The fabrication process involves a combination of standard, VLSI-compatible, micromachining procedures and computer-aided screen-printing. A dielectric membrane of Si3N4 and SiO2 has been obtained with an embedded poly-Si resistor acting as a heating element. The bonding pad and contacts have been realised by a Ti/TiN/Cr/Au structure and the sensing film has been deposited by a screen-printing technique. Here follows a characterisation of a device, based on SnO2 sensing film, at working conditions together with re response curve for CH4 and NO2. We will also address some important improvements to the micro-hotplate structure, which leads to an increased flexibility of the device.
Low-power thick-film gas sensor obtained by a combination of screen printing and micromachining techniques
Guarnieri, Vittorio;Margesin, Benno;Giacomozzi, Flavio;Zen, Mario;
2001-01-01
Abstract
A novel prototype of low-power thick-film gas sensor deposited by screen-printing onto a micromachined hotplate is presented. The micro-heater is designed to maintain a film temperature of 400°C with less than 30mW of input power. The fabrication process involves a combination of standard, VLSI-compatible, micromachining procedures and computer-aided screen-printing. A dielectric membrane of Si3N4 and SiO2 has been obtained with an embedded poly-Si resistor acting as a heating element. The bonding pad and contacts have been realised by a Ti/TiN/Cr/Au structure and the sensing film has been deposited by a screen-printing technique. Here follows a characterisation of a device, based on SnO2 sensing film, at working conditions together with re response curve for CH4 and NO2. We will also address some important improvements to the micro-hotplate structure, which leads to an increased flexibility of the device.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
