Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)

Nicoleta, Dinu; Pierre, Barrillon; Cyril, Bazin; Nicola, Belcari; Maria Giuseppina Bisogni,; Sylvie Bondil Blin,; Boscardin, Maurizio; Vincent, Chaumat; Gianmaria, Collazuol; Christophe De La Taille,; Alberto Del Guerra,; Gabriela, Llosa; Sara, Marcatili; Melchiorri, Mirko; Piemonte, Claudio; Veronique, Puill; Tarolli, Alessandro; Jean Francois Vagnucci,; Zorzi, Nicola

doi:10.1088/1748-0221/4/03/P03016

This work reports on the electrical (static and dynamic) as well as on the optical characteristics of a prototype matrix of Silicon Photomultipliers (SiPM). The prototype matrix consists of 4×4 SiPM’s on the same substrate fabricated at FBK-irst (Trento, Italy). Each SiPM of the matrix has an area of 1×1mm2 and it is composed of 625 microcells connected in parallel. Each microcell of the SiPM is a GM-APD (n+/p junction on P+ substrate) with an area of 40×40mm2 connected in series with its integrated polysilicon quenching resistance. The static characteristics as breakdown voltage, quenching resistance, post-breakdown dark current as well as the dynamic characteristics as gain and dark count rate have been analysed. The photon detection efficiency as a function of wavelength and operation voltage has been also estimated.

Scheda prodotto non validato

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte di FBK.

Titolo:	Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)
Autori:	Nicoleta Dinu Pierre Barrillon Cyril Bazin Nicola Belcari Maria Giuseppina Bisogni Sylvie Bondil Blin Boscardin, Maurizio Vincent Chaumat Gianmaria Collazuol Christophe De La Taille Alberto Del Guerra Gabriela Llosa Sara Marcatili Melchiorri, Mirko Piemonte, Claudio Veronique Puill Tarolli, Alessandro Jean Francois Vagnucci Zorzi, Nicola mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2009
Rivista:	JOURNAL OF INSTRUMENTATION
Abstract:	This work reports on the electrical (static and dynamic) as well as on the optical characteristics of a prototype matrix of Silicon Photomultipliers (SiPM). The prototype matrix consists of 4×4 SiPM’s on the same substrate fabricated at FBK-irst (Trento, Italy). Each SiPM of the matrix has an area of 1×1mm2 and it is composed of 625 microcells connected in parallel. Each microcell of the SiPM is a GM-APD (n+/p junction on P+ substrate) with an area of 40×40mm2 connected in series with its integrated polysilicon quenching resistance. The static characteristics as breakdown voltage, quenching resistance, post-breakdown dark current as well as the dynamic characteristics as gain and dark count rate have been analysed. The photon detection efficiency as a function of wavelength and operation voltage has been also estimated.
Handle:	http://hdl.handle.net/11582/4509
Appare nelle tipologie:	1.1 Articolo in rivista

File in questo prodotto:

Non ci sono file associati a questo prodotto.

Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/11582/4509

Citazioni

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

CINECA IRIS Institutional Research Information System

Scheda prodotto non validato

File in questo prodotto: