We report on the development of Silicon PhotoMultipliers (SiPM) at the Fondazione Bruno Kessler (FBK)-irst (Trento, Italy) in the framework of a collaboration with INFN. Device geometry and technology are resumed, and selected results from the characterization of SiPM prototypes from three production batches are reported, including static, dynamic, and noise properties, as well as photodetection efficiency.

Development of Silicon PhotoMultipliers at FBK-irst

Piemonte, Claudio;Boscardin, Maurizio;Dalla Betta, Gian Franco;Melchiorri, Mirko;Pozza, Alberto;Zorzi, Nicola
2007

Abstract

We report on the development of Silicon PhotoMultipliers (SiPM) at the Fondazione Bruno Kessler (FBK)-irst (Trento, Italy) in the framework of a collaboration with INFN. Device geometry and technology are resumed, and selected results from the characterization of SiPM prototypes from three production batches are reported, including static, dynamic, and noise properties, as well as photodetection efficiency.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/4344
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