This contribution presents a parametric analysis and TCAD simulations of the radiation resistance of compensated LGADs. In such designs, the gain layer is engineered through compensation of acceptor and donor dopants. Following radiation-induced deactivation of donor and acceptor atoms in the gain layer, the goal is to preserve the multiplication mechanism beyond the radiation tolerance of current LGAD technology of 2×10 15 n eq/cm2 for 50 µm-thick sensors. The conditions under which compensated LGADs may achieve improved radiation hardness with respect to conventional LGAD technology are resented. Starting from assumptions regarding acceptor and donor deactivation rates, the optimal initial concentrations that maximize the extent of LGAD radiation tolerance is computed. If, as preliminary observations suggest, the donor removal rate exceeds that of the acceptor, compensated LGADs would need to be designed to operate initially under a high external bias close to the single-event burnout limit.
How to operate a compensated LGAD
A. Bisht;M. Centis Vignali;G. Paternoster;S. M. A. Sarfraz;
2026-01-01
Abstract
This contribution presents a parametric analysis and TCAD simulations of the radiation resistance of compensated LGADs. In such designs, the gain layer is engineered through compensation of acceptor and donor dopants. Following radiation-induced deactivation of donor and acceptor atoms in the gain layer, the goal is to preserve the multiplication mechanism beyond the radiation tolerance of current LGAD technology of 2×10 15 n eq/cm2 for 50 µm-thick sensors. The conditions under which compensated LGADs may achieve improved radiation hardness with respect to conventional LGAD technology are resented. Starting from assumptions regarding acceptor and donor deactivation rates, the optimal initial concentrations that maximize the extent of LGAD radiation tolerance is computed. If, as preliminary observations suggest, the donor removal rate exceeds that of the acceptor, compensated LGADs would need to be designed to operate initially under a high external bias close to the single-event burnout limit.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
