Periphery layout strategies to mitigate discharges in thin silicon sensors

This work explores the onset of micro- and macro-discharges in thin silicon sensors, focusing on the effects induced by irradiation. The study uses PiN structures, although the findings are applicable to sensors with and without gain. Sixteen variations of the edge termination structure design and three sensor thicknesses (20, 30, and 45μm) were examined. The sensors were tested before and after irradiation up to a fluence of 2.5 × 1015 neqcm−2.The primary objective of this study is to understand how shaping the electric field, driven by the different guard ring configurations, affects micro- and macro-discharges in thin sensors. Preliminary results show variations in noise characteristics across the designs and different thickness, offering valuable insights for optimizing sensor performance in radiation-harsh environments.