New generation of TSV-enabled SiPM technologies for medical imaging and industrial applications

2.5D and 3D integration enable high-density, low-latency interconnects by routing signals vertically through the highly doped silicon bulk using Through-Silicon Vias (TSVs). These technologies support FBK’s development of TSVs, micro TSVs, and Backside-Illuminated SiPMs, enabling compact architectures with high segmentation while preserving the NUV-HD sensors’ electro-optical and timing performance. TSVs will ensure a very compact SiPM packaging when arranged in arrays and will allow achieving the best alignment when the tile is coupled with a scintillation crystal matrix or a hodoscope. With the glass-less TSV technology, the sensor does not need a glass support wafer, which would create an additional optical diffusing interface, negatively affecting light collection from the scintillator, the optical crosstalk between neighboring channels and, thus, the overall timing performance.