(010) EFG-grown Fe-doped β-Ga2O3 was tested as a low-noise X-ray detector with Ti/Au electrodes vertical structure. Its performance at low, high and no applied voltages was examined. The fabricated detector showed high X-ray detection performance manifested in its signal’s short fall and rise time (< 0.3 s) in all operation modes, showing two orders of magnitude decrease in response time of β-Ga2O3 X-ray detectors. The same temporal response was exhibited by a tested Au/Ni/β-Ga2O3/Ti/Au device. The detector’s signal is also characterized by excellent linear relation with X-ray tube current and high signal-to-noise ratio (SNR) optimized at − 5 V (> 103). Moreover, the X-ray-induced current signal exhibits high stability. Sub-band UV photocurrent signal showed a significantly slower response compared to X-ray-induced conductivity signal. Possible charge transport mechanisms involving ion migration are suggested and discussed. In this study, Fe doping is shown to significantly improve X-ray detection performance of Ga2O3, consolidating the applicability of Ga2O3 as a next-generation X-ray detector functioning with low power, high SNR and linearity, and significantly improved transient characteristics.

Fast X-ray detectors based on bulk β-Ga2O3 (Fe)

Ahmed Ibrahim Mohamed Hani Ibrahim;
2020-01-01

Abstract

(010) EFG-grown Fe-doped β-Ga2O3 was tested as a low-noise X-ray detector with Ti/Au electrodes vertical structure. Its performance at low, high and no applied voltages was examined. The fabricated detector showed high X-ray detection performance manifested in its signal’s short fall and rise time (< 0.3 s) in all operation modes, showing two orders of magnitude decrease in response time of β-Ga2O3 X-ray detectors. The same temporal response was exhibited by a tested Au/Ni/β-Ga2O3/Ti/Au device. The detector’s signal is also characterized by excellent linear relation with X-ray tube current and high signal-to-noise ratio (SNR) optimized at − 5 V (> 103). Moreover, the X-ray-induced current signal exhibits high stability. Sub-band UV photocurrent signal showed a significantly slower response compared to X-ray-induced conductivity signal. Possible charge transport mechanisms involving ion migration are suggested and discussed. In this study, Fe doping is shown to significantly improve X-ray detection performance of Ga2O3, consolidating the applicability of Ga2O3 as a next-generation X-ray detector functioning with low power, high SNR and linearity, and significantly improved transient characteristics.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/366348
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