Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing

We present a novel approach for the optical activation of the negatively-charged silicon vacancy ( VSi−) center in ion irradiated silicon carbide (SiC) via ns-pulsed laser annealing in the 234–2180 mJ cm− 2 energy density range. The laser annealing process is investigated under 355 nm and 532 nm wavelengths at pulse energy densities below the melting threshold and validated by means of Raman spectroscopy and photoluminescence mapping. The combined effect of ns pulsed laser annealing and subsequent thermal treatment is also assessed. The results offer a promising resource for the development of integrated photonic SiC devices and could be extended to a potentially wide range of applications involving other classes of solid-state quantum emitters. We present a novel approach for the optical activation of the negatively-charged silicon vacancy ( V Si − ) center in ion irradiated silicon carbide (SiC) via ns-pulsed laser annealing in the 234–2180 mJ cm − 2 energy density range. The laser annealing process is investigated under 355 nm and 532 nm wavelengths at pulse energy densities below the melting threshold and validated by means of Raman spectroscopy and photoluminescence mapping. The combined effect of ns pulsed laser annealing and subsequent thermal treatment is also assessed. The results offer a promising resource for the development of integrated photonic SiC devices and could be extended to a potentially wide range of applications involving other classes of solid-state quantum emitters.