A detailed study of the carrier absorption (CA) mechanism in multilayered silicon-nanocrystal (Si-nc) rib waveguides is reported. A pump (532 nm) and probe (1535 nm) technique is used to assess two loss mechanisms due to optical excitation of the system: one characterized by slow (seconds) dynamics related to heating and the other charaterized by fast (microsecond) dynamics associated to CA mechanisms within the Si-nc. CA losses increase with the pumping flux of up to 6 dB/cm for 3x10^20 photons/cm^2 s. by comparing the temporal dynamics of CA losses and time resolved photoluminescence, we suggest that both are determined by exciton generation and recombination.

Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at 1.54 micrometer

Daldosso, Nicola;Pucker, Georg;
2008-01-01

Abstract

A detailed study of the carrier absorption (CA) mechanism in multilayered silicon-nanocrystal (Si-nc) rib waveguides is reported. A pump (532 nm) and probe (1535 nm) technique is used to assess two loss mechanisms due to optical excitation of the system: one characterized by slow (seconds) dynamics related to heating and the other charaterized by fast (microsecond) dynamics associated to CA mechanisms within the Si-nc. CA losses increase with the pumping flux of up to 6 dB/cm for 3x10^20 photons/cm^2 s. by comparing the temporal dynamics of CA losses and time resolved photoluminescence, we suggest that both are determined by exciton generation and recombination.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/3634
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact