A detailed study of the carrier absorption (CA) mechanism in multilayered silicon-nanocrystal (Si-nc) rib waveguides is reported. A pump (532 nm) and probe (1535 nm) technique is used to assess two loss mechanisms due to optical excitation of the system: one characterized by slow (seconds) dynamics related to heating and the other charaterized by fast (microsecond) dynamics associated to CA mechanisms within the Si-nc. CA losses increase with the pumping flux of up to 6 dB/cm for 3x10^20 photons/cm^2 s. by comparing the temporal dynamics of CA losses and time resolved photoluminescence, we suggest that both are determined by exciton generation and recombination.

Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at 1.54 micrometer

Daldosso, Nicola;Pucker, Georg;
2008

Abstract

A detailed study of the carrier absorption (CA) mechanism in multilayered silicon-nanocrystal (Si-nc) rib waveguides is reported. A pump (532 nm) and probe (1535 nm) technique is used to assess two loss mechanisms due to optical excitation of the system: one characterized by slow (seconds) dynamics related to heating and the other charaterized by fast (microsecond) dynamics associated to CA mechanisms within the Si-nc. CA losses increase with the pumping flux of up to 6 dB/cm for 3x10^20 photons/cm^2 s. by comparing the temporal dynamics of CA losses and time resolved photoluminescence, we suggest that both are determined by exciton generation and recombination.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/3634
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