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EnglishA detailed study of the carrier absorption (CA) mechanism in multilayered silicon-nanocrystal (Si-nc) rib waveguides is reported. A pump (532 nm) and probe (1535 nm) technique is used to assess two loss mechanisms due to optical excitation of the system: one characterized by slow (seconds) dynamics related to heating and the other charaterized by fast (microsecond) dynamics associated to CA mechanisms within the Si-nc. CA losses increase with the pumping flux of up to 6 dB/cm for 3x10^20 photons/cm^2 s. by comparing the temporal dynamics of CA losses and time resolved photoluminescence, we suggest that both are determined by exciton generation and recombination.
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| Titolo: | Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at 1.54 micrometer | |
| Autori: | ||
| Data di pubblicazione: | 2008 | |
| Rivista: | ||
| Abstract: | A detailed study of the carrier absorption (CA) mechanism in multilayered silicon-nanocrystal (Si-nc) rib waveguides is reported. A pump (532 nm) and probe (1535 nm) technique is used to assess two loss mechanisms due to optical excitation of the system: one characterized by slow (seconds) dynamics related to heating and the other charaterized by fast (microsecond) dynamics associated to CA mechanisms within the Si-nc. CA losses increase with the pumping flux of up to 6 dB/cm for 3x10^20 photons/cm^2 s. by comparing the temporal dynamics of CA losses and time resolved photoluminescence, we suggest that both are determined by exciton generation and recombination. | |
| Handle: | http://hdl.handle.net/11582/3634 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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