The response of Low Gain Avalanche Diodes (LGADs), a type of thin silicon detector with internal gain, to X-rays of energies between 6–16 keV was characterized at the Stanford Synchrotron Radiation Lightsource (SSRL). The utilized beamline at SSRL was 7-2, with a nominal beam size of 30 μm, repetition rate of 500 MHz, and with an energy dispersion ΔE/E of 10-4. Multi-channel LGADs, AC-LGADs, and TI-LGADs of different thicknesses and gain layer configurations from Hamamatsu Photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested. The sensors were read out with a discrete component board and digitized with a fast oscilloscope or a CAEN fast digitizer. The devices' energy response, energy resolution, and time resolution were measured as a function of X-ray energy and position. The charge collection and multiplication mechanism were simulated using TCAD Sentaurus, and the results were compared with the collected data.

Synchrotron light source focused X-ray detection with LGADs, AC-LGADs and TI-LGADs

A. Bisht;M. Centis Vignali;G. Paternoster;M. Boscardin
2025-01-01

Abstract

The response of Low Gain Avalanche Diodes (LGADs), a type of thin silicon detector with internal gain, to X-rays of energies between 6–16 keV was characterized at the Stanford Synchrotron Radiation Lightsource (SSRL). The utilized beamline at SSRL was 7-2, with a nominal beam size of 30 μm, repetition rate of 500 MHz, and with an energy dispersion ΔE/E of 10-4. Multi-channel LGADs, AC-LGADs, and TI-LGADs of different thicknesses and gain layer configurations from Hamamatsu Photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested. The sensors were read out with a discrete component board and digitized with a fast oscilloscope or a CAEN fast digitizer. The devices' energy response, energy resolution, and time resolution were measured as a function of X-ray energy and position. The charge collection and multiplication mechanism were simulated using TCAD Sentaurus, and the results were compared with the collected data.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/361587
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact