The response of Low Gain Avalanche Diodes (LGADs), a type of thin silicon detector with internal gain, to X-rays of energies between 6–16 keV was characterized at the Stanford Synchrotron Radiation Lightsource (SSRL). The utilized beamline at SSRL was 7-2, with a nominal beam size of 30 μm, repetition rate of 500 MHz, and with an energy dispersion ΔE/E of 10-4. Multi-channel LGADs, AC-LGADs, and TI-LGADs of different thicknesses and gain layer configurations from Hamamatsu Photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested. The sensors were read out with a discrete component board and digitized with a fast oscilloscope or a CAEN fast digitizer. The devices' energy response, energy resolution, and time resolution were measured as a function of X-ray energy and position. The charge collection and multiplication mechanism were simulated using TCAD Sentaurus, and the results were compared with the collected data.
Synchrotron light source focused X-ray detection with LGADs, AC-LGADs and TI-LGADs
A. Bisht;M. Centis Vignali;G. Paternoster;M. Boscardin
2025-01-01
Abstract
The response of Low Gain Avalanche Diodes (LGADs), a type of thin silicon detector with internal gain, to X-rays of energies between 6–16 keV was characterized at the Stanford Synchrotron Radiation Lightsource (SSRL). The utilized beamline at SSRL was 7-2, with a nominal beam size of 30 μm, repetition rate of 500 MHz, and with an energy dispersion ΔE/E of 10-4. Multi-channel LGADs, AC-LGADs, and TI-LGADs of different thicknesses and gain layer configurations from Hamamatsu Photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested. The sensors were read out with a discrete component board and digitized with a fast oscilloscope or a CAEN fast digitizer. The devices' energy response, energy resolution, and time resolution were measured as a function of X-ray energy and position. The charge collection and multiplication mechanism were simulated using TCAD Sentaurus, and the results were compared with the collected data.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
