In this paper, we report on an Avalanche Photodiode (APD) fabricated in a standard 0.35-μm CMOS technology. The main electrooptical characteristics of the device are presented, showing a remarkably low-noise factor if compared to other CMOS APDs. An estimation of the noise properties of a pixel based on the proposed photodiode with charge-amplifier readout is performed, showing that it could have an improved noise performance with respect to a standard photodiode-based pixel.
Low-noise avalanche photodiode in standard 0.35-um CMOS technology
Pancheri, Lucio;Scandiuzzo, Mauro;Stoppa, David;Dalla Betta, Gian Franco
2008-01-01
Abstract
In this paper, we report on an Avalanche Photodiode (APD) fabricated in a standard 0.35-μm CMOS technology. The main electrooptical characteristics of the device are presented, showing a remarkably low-noise factor if compared to other CMOS APDs. An estimation of the noise properties of a pixel based on the proposed photodiode with charge-amplifier readout is performed, showing that it could have an improved noise performance with respect to a standard photodiode-based pixel.File in questo prodotto:
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