In this paper, we report on an Avalanche Photodiode (APD) fabricated in a standard 0.35-μm CMOS technology. The main electrooptical characteristics of the device are presented, showing a remarkably low-noise factor if compared to other CMOS APDs. An estimation of the noise properties of a pixel based on the proposed photodiode with charge-amplifier readout is performed, showing that it could have an improved noise performance with respect to a standard photodiode-based pixel.

Low-noise avalanche photodiode in standard 0.35-um CMOS technology

Pancheri, Lucio;Scandiuzzo, Mauro;Stoppa, David;Dalla Betta, Gian Franco
2008-01-01

Abstract

In this paper, we report on an Avalanche Photodiode (APD) fabricated in a standard 0.35-μm CMOS technology. The main electrooptical characteristics of the device are presented, showing a remarkably low-noise factor if compared to other CMOS APDs. An estimation of the noise properties of a pixel based on the proposed photodiode with charge-amplifier readout is performed, showing that it could have an improved noise performance with respect to a standard photodiode-based pixel.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/3594
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