We report the fabrication of gallium nitride (GaN)-based light-emitting diode (LED) with uniform and monolayer graphene as transparent current spreading layer. Two-dimensional graphene successfully provides efficient current spreading and hole injection into the active layers of the LEDs for light emission. To further reduce the ohmic contact resistance between p-GaN and graphene film, ultrathin NiOx inter-layer is introduced in the device, improving its electrical and optical performance.
Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer
Fengyuan Liu;
2015-01-01
Abstract
We report the fabrication of gallium nitride (GaN)-based light-emitting diode (LED) with uniform and monolayer graphene as transparent current spreading layer. Two-dimensional graphene successfully provides efficient current spreading and hole injection into the active layers of the LEDs for light emission. To further reduce the ohmic contact resistance between p-GaN and graphene film, ultrathin NiOx inter-layer is introduced in the device, improving its electrical and optical performance.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
1-s2.0-S0038110115000830-main.pdf
solo utenti autorizzati
Licenza:
Copyright dell'editore
Dimensione
1.93 MB
Formato
Adobe PDF
|
1.93 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
