This paper describes different variants of broadband and simple attenuator modules for beamforming applications, based on radio frequency micro electro-mechanical systems (RF-MEMS), framed within coplanar waveguide (CPW) structures. The modules proposed in the first part of this work differ in their actuation voltage, topology, and desired attenuation level. Fabricated samples of basic 1-bit attenuation modules, characterized by a moderate footprint of 690 × 1350 µm2 and aiming at attenuation levels of −2, −3, and −5 dB in the 24.25–27.5 GHz range, are presented in their variants featuring both low actuation voltages (5–9 V) as well as higher values (~45 V), the latter ones ensuring larger mechanical restoring force (and robustness against stiction). Beyond the fabrication non-idealities that affected the described samples, the substantial agreement between simulations and measurement outcomes proved that the proposed designs could provide precise attenuation levels up to 40 GHz, ranging up to nearly −3 dB and −5 dB for the series and shunt variants, respectively. Moreover, they could be effective building blocks for future wideband and reconfigurable RF-MEMS attenuators. In fact, in the second part of this work, combinations of the discussed cells and other configurations meant for larger attenuation levels are investigated.

Discussion and Demonstration of RF-MEMS Attenuators Design Concepts and Modules for Advanced Beamforming in the Beyond-5G and 6G Scenario—Part 1

Girolamo Tagliapietra;Flavio Giacomozzi;Massimiliano Michelini;Jacopo Iannacci
2024-01-01

Abstract

This paper describes different variants of broadband and simple attenuator modules for beamforming applications, based on radio frequency micro electro-mechanical systems (RF-MEMS), framed within coplanar waveguide (CPW) structures. The modules proposed in the first part of this work differ in their actuation voltage, topology, and desired attenuation level. Fabricated samples of basic 1-bit attenuation modules, characterized by a moderate footprint of 690 × 1350 µm2 and aiming at attenuation levels of −2, −3, and −5 dB in the 24.25–27.5 GHz range, are presented in their variants featuring both low actuation voltages (5–9 V) as well as higher values (~45 V), the latter ones ensuring larger mechanical restoring force (and robustness against stiction). Beyond the fabrication non-idealities that affected the described samples, the substantial agreement between simulations and measurement outcomes proved that the proposed designs could provide precise attenuation levels up to 40 GHz, ranging up to nearly −3 dB and −5 dB for the series and shunt variants, respectively. Moreover, they could be effective building blocks for future wideband and reconfigurable RF-MEMS attenuators. In fact, in the second part of this work, combinations of the discussed cells and other configurations meant for larger attenuation levels are investigated.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/346707
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