We report on the design, fabrication, and characterization of a Silicon Nitride (SiN)-based integrated photonic chip in which the dielectric waveguides are coupled to photodetectors integrated homogeneously into the Silicon substrate. The photonic-electronic coupling was realized by a 3D inverse tapering of SiN waveguides. The novelty of our approach consists in tapering the waveguide in the vertical direction by means of an engineered wet chemical etching. This allows for a smooth transition from a full-height to an arbitrarily thin waveguide thickness at the detector location, expanding adiabatically the optical mode towards the latter. The measured chips showed a responsivity $R\approx 109~\mu$A/mW and a corresponding quantum efficiency of $16\%$ at an excitation wavelength of $850$~nm. Our technological solution offers a versatile method for a top-down monolithic integration of lightwave circuitries with substrate-located photon sensing devices.

Coupling of Photonic Waveguides to Integrated Detectors Using 3D Inverse Tapering

Martino Bernard
;
Luca Gemma;Giovanni Paternoster;Mher Ghulinyan
2022-01-01

Abstract

We report on the design, fabrication, and characterization of a Silicon Nitride (SiN)-based integrated photonic chip in which the dielectric waveguides are coupled to photodetectors integrated homogeneously into the Silicon substrate. The photonic-electronic coupling was realized by a 3D inverse tapering of SiN waveguides. The novelty of our approach consists in tapering the waveguide in the vertical direction by means of an engineered wet chemical etching. This allows for a smooth transition from a full-height to an arbitrarily thin waveguide thickness at the detector location, expanding adiabatically the optical mode towards the latter. The measured chips showed a responsivity $R\approx 109~\mu$A/mW and a corresponding quantum efficiency of $16\%$ at an excitation wavelength of $850$~nm. Our technological solution offers a versatile method for a top-down monolithic integration of lightwave circuitries with substrate-located photon sensing devices.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/335870
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