The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Capacitance voltage (C–V) measurements at different frequencies and temperatures are being compared with the bias voltage dependence of the charge collection on an irradiated n-type magnetic Czochralski silicon detector. Good agreement between the reciprocal capacitance and the median collected charge is found when the frequency of the C–V measurement is selected such that it scales with the temperature dependence of the leakage current. Measuring C–V characteristics at prescribed combinations of temperature and frequency allows then a realistic estimate of the depletion characteristics of irradiated silicon strip detectors based on C–V data alone.

Charge collection and capacitance-voltage analysis in irradiated n-type magnetic Czochralski silicon detectors

Boscardin, Maurizio;Piemonte, Claudio;Zorzi, Nicola;Dalla Betta, Gian Franco
2007

Abstract

The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Capacitance voltage (C–V) measurements at different frequencies and temperatures are being compared with the bias voltage dependence of the charge collection on an irradiated n-type magnetic Czochralski silicon detector. Good agreement between the reciprocal capacitance and the median collected charge is found when the frequency of the C–V measurement is selected such that it scales with the temperature dependence of the leakage current. Measuring C–V characteristics at prescribed combinations of temperature and frequency allows then a realistic estimate of the depletion characteristics of irradiated silicon strip detectors based on C–V data alone.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/3343
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