In the past two years 3D silicon radiation detectors have been developed at Fondazione Bruno Kessler - FBK, Trento, Italy (formerly ITC-irst). As a first step toward full 3D devices, simplified structures featuring columnar electrodes of one doping type only were fabricated. This paper reports the electrooptical characterization of 3D test diodes made with this approach. Experimental results and TCAD simulations provide good insight into the charge collection mechanism and response speed limitation of these structures.
Electro-optical measurements of 3D-stc detectors fabricated at ITC-irst
Boscardin, Maurizio;Dalla Betta, Gian Franco;Piemonte, Claudio;Pozza, Alberto;Ronchin, Sabina;Zorzi, Nicola
2007-01-01
Abstract
In the past two years 3D silicon radiation detectors have been developed at Fondazione Bruno Kessler - FBK, Trento, Italy (formerly ITC-irst). As a first step toward full 3D devices, simplified structures featuring columnar electrodes of one doping type only were fabricated. This paper reports the electrooptical characterization of 3D test diodes made with this approach. Experimental results and TCAD simulations provide good insight into the charge collection mechanism and response speed limitation of these structures.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.