In the past two years 3D silicon radiation detectors have been developed at Fondazione Bruno Kessler - FBK, Trento, Italy (formerly ITC-irst). As a first step toward full 3D devices, simplified structures featuring columnar electrodes of one doping type only were fabricated. This paper reports the electrooptical characterization of 3D test diodes made with this approach. Experimental results and TCAD simulations provide good insight into the charge collection mechanism and response speed limitation of these structures.

Electro-optical measurements of 3D-stc detectors fabricated at ITC-irst

Boscardin, Maurizio;Dalla Betta, Gian Franco;Piemonte, Claudio;Pozza, Alberto;Ronchin, Sabina;Zorzi, Nicola
2007-01-01

Abstract

In the past two years 3D silicon radiation detectors have been developed at Fondazione Bruno Kessler - FBK, Trento, Italy (formerly ITC-irst). As a first step toward full 3D devices, simplified structures featuring columnar electrodes of one doping type only were fabricated. This paper reports the electrooptical characterization of 3D test diodes made with this approach. Experimental results and TCAD simulations provide good insight into the charge collection mechanism and response speed limitation of these structures.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/3340
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