Within the R&D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), silicon strip detectors (SSD) and test structures (TS) were manufactured on several high-resistivity substrates: p-type Magnetic Czochralski (MCz) and Float Zone (FZ), and n-type FZ. To test total dose (TID) effects they were irradiated with 60-Co gammas and the impact of surface radiation damage on the detector properties was studied. Selected results from the pre-rad and post-rad characterization of detectors and TS are presented, in particular interstrip capacitance and resistance, break-down voltage, flatband voltage and oxide charge. Surface damage effects show saturation after 150krad and breakdown performance improves considerably after 210krad. Annealing was performed both at room temperature and at 60C, and large effects on the surface parameters observed.
Total dose dependence of oxide charge, interstrip capacitance and breakdown behavior of sLHC prototype silicon strip detectors and test structures of the SMART collaboration
Boscardin, Maurizio;Piemonte, Claudio;Pozza, Alberto;Zorzi, Nicola;Dalla Betta, Gian Franco;Resta, Giuseppe;
2007-01-01
Abstract
Within the R&D Program for the luminosity upgrade proposed for the Large Hadron Collider (LHC), silicon strip detectors (SSD) and test structures (TS) were manufactured on several high-resistivity substrates: p-type Magnetic Czochralski (MCz) and Float Zone (FZ), and n-type FZ. To test total dose (TID) effects they were irradiated with 60-Co gammas and the impact of surface radiation damage on the detector properties was studied. Selected results from the pre-rad and post-rad characterization of detectors and TS are presented, in particular interstrip capacitance and resistance, break-down voltage, flatband voltage and oxide charge. Surface damage effects show saturation after 150krad and breakdown performance improves considerably after 210krad. Annealing was performed both at room temperature and at 60C, and large effects on the surface parameters observed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
