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EnglishThe charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26MeV protons. After a 1MeV neutron equivalent fluence of 1x10E15 cm-2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements.
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| Titolo: | Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors |
| Autori: | |
| Data di pubblicazione: | 2007 |
| Rivista: | |
| Abstract: | The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26MeV protons. After a 1MeV neutron equivalent fluence of 1x10E15 cm-2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements. |
| Handle: | http://hdl.handle.net/11582/3297 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/11582/3297
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