The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26MeV protons. After a 1MeV neutron equivalent fluence of 1x10E15 cm-2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements.

Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors

Boscardin, Maurizio;Piemonte, Claudio;Zorzi, Nicola;
2007

Abstract

The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26MeV protons. After a 1MeV neutron equivalent fluence of 1x10E15 cm-2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/3297
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