Poly(vinyl alcohol) gate dielectric surface treatment with vitamin C for poly(3-hexylthiophene-2,5-diyl) based field effect transistors performance improvement

We report on organic field effect transistors (OFETs) prepared using cross-linked poly(vinyl alcohol) (cr-PVA) as gate dielectric and 100% regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) as channel semiconductor. The gate dielectric surface was treated using an environmentally friendly aqueous solution of ascorbic acid (vitamin C), which is a reducing agent. The treatment contributed to the passivation of positively charged defects present on the surface of cr-PVA gate dielectric, hence resulting in the enhancement of capacitance, field effect mobility, ON/OFF current ratio and sub-threshold swing.