We report on charge collection studies on 3D silicon detectors of single-type column n-diffusions in p-substrate, configured either as strip or as pad detectors. The charge is generated by penetrating beta particles from a 90-Sr source which, together with a scintillation counter, serves as an electron telescope. The charge collection as a function of bias voltage is compared with the depletion thickness derived from the measured C–V characteristics.

Charge collection measurements in single-type column 3D sensors

Boscardin, Maurizio;Piemonte, Claudio;Pozza, Alberto;Ronchin, Sabina;Zorzi, Nicola;Dalla Betta, Gian Franco
2007

Abstract

We report on charge collection studies on 3D silicon detectors of single-type column n-diffusions in p-substrate, configured either as strip or as pad detectors. The charge is generated by penetrating beta particles from a 90-Sr source which, together with a scintillation counter, serves as an electron telescope. The charge collection as a function of bias voltage is compared with the depletion thickness derived from the measured C–V characteristics.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/3253
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