Effect of metal work function of asymmetric dielectric tunnel FET on its performance

In the present era, with the advancement of various non-conventional devices, hardware components dimensions are shrinking to great extent. Among those, significant part of researchers focus is drawn by Tunnel Field Effect Transistors (TFETs), because of their fundamental attribute of carriers conduction through built-in tunnelling mechanism. In this work, an asymmetric gate Tunnel Field Effect Transistor (TFET) is reported and discussed. This device structure relies on Asymmetric Dual Material Double Gate Tunnel Field Effect Transistor (ADMDG TFET) with reduced oxide thickness of 0.5 nm and optimised metal work function used at the gate terminal of the proposed TFET. For the performance analysis of such a short channel device, the relevant parameters, like threshold voltage, electric field, drain current, surface potential, Ion, Ioff and Subthreshold Swing (SS), have been considered. The proposed structure is simulated by means of the 2-D Sentaurus TCAD tool. The results report significantly low OFF-state current (Ioff), considerably improved ON-state current (Ion), and enhanced SS.