In this paper, we report on the characterization of silicon 3D and planar sensors, coupled with different neutron converter materials, such as 10B, and 6LiF, with different deposition thickness. Selected results from the electrical and functional characterization of the devices are shown and comparatively discussed with the aid of SRIM and Geant4 simulations. The limited neutron detection efficiency, on the order of 1% (planar) and 8% (3D) from simulations, is understood, and hints for the optimization of the devices have been derived.

Characterization of 3D and planar Si diodes with different neutron converter materials

Mendicino, R.;Boscardin, M.;Ronchin, S.
2015

Abstract

In this paper, we report on the characterization of silicon 3D and planar sensors, coupled with different neutron converter materials, such as 10B, and 6LiF, with different deposition thickness. Selected results from the electrical and functional characterization of the devices are shown and comparatively discussed with the aid of SRIM and Geant4 simulations. The limited neutron detection efficiency, on the order of 1% (planar) and 8% (3D) from simulations, is understood, and hints for the optimization of the devices have been derived.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/323424
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