We report on the characterization by a position resolved laser system of small-pitch 3D diodes irradiated with neutrons up to an extremely high fluence of 3.5 x 10(16) n(eq) cm(-2). We show that very high values of signal efficiency are obtained, in good agreement with the geometrical expectation based on the small values of the inter-electrode spacings, and also boosted by charge multiplication effects at high voltage. These results confirm the very high radiation tolerance of small-pitch 3D sensors well beyond the maximum fluences expected at the High Luminosity LHC.
Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5 × 1016 neq cm−2
Mendicino, R.;Boscardin, M.;
2019-01-01
Abstract
We report on the characterization by a position resolved laser system of small-pitch 3D diodes irradiated with neutrons up to an extremely high fluence of 3.5 x 10(16) n(eq) cm(-2). We show that very high values of signal efficiency are obtained, in good agreement with the geometrical expectation based on the small values of the inter-electrode spacings, and also boosted by charge multiplication effects at high voltage. These results confirm the very high radiation tolerance of small-pitch 3D sensors well beyond the maximum fluences expected at the High Luminosity LHC.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
