We have largely improved the performance of our detector-compatible Si JFETs by optimizing the fabrication technology. New devices feature thermal noise values close to the theoretical ones, and remarkably low 1/f noise figures. In view ofadopting these JFETs for X-ray imaging and HEP applications, bulk and surface radiation damage tests have been carried out by irradiating single transistors and test structures with neutrons and X-rays. Selected results from static and noise characterization of irradiated devices are discussed in this paper, and the impact of radiation effects on the performance of JFET-based circuits is addressed.

Radiation damage studies of detector-compatible Si JFETs

Dalla Betta, Gian Franco;Boscardin, Maurizio;Pancheri, Lucio;Piemonte, Claudio;Ratti, Lodovico;Zorzi, Nicola
2007

Abstract

We have largely improved the performance of our detector-compatible Si JFETs by optimizing the fabrication technology. New devices feature thermal noise values close to the theoretical ones, and remarkably low 1/f noise figures. In view ofadopting these JFETs for X-ray imaging and HEP applications, bulk and surface radiation damage tests have been carried out by irradiating single transistors and test structures with neutrons and X-rays. Selected results from static and noise characterization of irradiated devices are discussed in this paper, and the impact of radiation effects on the performance of JFET-based circuits is addressed.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/3197
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact