Decoration and doping of graphene by RF sputtering and atomic layer deposition processes

Recently graphene and graphene-based hybrid materials have attracted much attention due to unique chemical and physical properties and a wide range of applications such as photovoltaics, catalysis, optoelectronics, electronics, energy and hydrogen storage. To develop an appropriate understanding of the properties of these hybrid materials, it is necessary to address the material preparation, structural and defect issues as well as their influence on the performance. This work will provide a review on the several methods which have been used for the production of hybrid materials based on graphene. In particular, it will deal with graphene-based materials doping and intercalation processes by low pressure plasma route and atomic layer deposition, the materials chemical and electronic properties as well as their defect control. Transition metals and their oxides will be considered for graphene-based materials decoration. The possibility of a combination of electronic properties and structural disorder in doped-graphene for application in the energy sector will be presented. The effect of the deposition process parameters on the material electron properties will be investigated as well as correlation with the hybrid materials performance in energy applications like hydrogen storage and catalysis.