Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275nm) to infrared (1150nm). Applying a gate voltage VG, the rise time decreases down to about 1ns, making our devices comparable to most commercial PDs.

2D Carbon Material/Silicon Heterojunctions for Fast Response Self-Powered Photodetector

Boscardin, M.;Crivellari, M.
2019-01-01

Abstract

Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275nm) to infrared (1150nm). Applying a gate voltage VG, the rise time decreases down to about 1ns, making our devices comparable to most commercial PDs.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/318748
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