This paper reports on the electrical characterization of the first prototypes of Geiger-Mode Avalanche Photodiodes GM-APDs) and Silicon Photomultipliers (SiPMs) produced at ITC-irst, Trento. Both static and functional measurements have been performed in dark condition. The static tests, consisting in reverse and forward IV measurements, have been performed on 20 GM-APDs and 90 SiPMs. The breakdown voltage, the quenching resistance value and the current level have been proved to be very uniform. On the other hand, the analysis of the dark signals allowed the extraction of important properties such as the dark count rate, the gain, the after-pulse and optical cross-talk (in case of the SiPMs) rates. These parameters have been evaluated as a function of the bias voltage, showing trends perfectly compatible with the theory of the device.
Characterization of the first prototypes of silicon photomultiplier fabricated at ITC-irst
Piemonte, Claudio;Boscardin, Maurizio;Dalla Betta, Gian Franco;Pozza, Alberto;Zorzi, Nicola
2007-01-01
Abstract
This paper reports on the electrical characterization of the first prototypes of Geiger-Mode Avalanche Photodiodes GM-APDs) and Silicon Photomultipliers (SiPMs) produced at ITC-irst, Trento. Both static and functional measurements have been performed in dark condition. The static tests, consisting in reverse and forward IV measurements, have been performed on 20 GM-APDs and 90 SiPMs. The breakdown voltage, the quenching resistance value and the current level have been proved to be very uniform. On the other hand, the analysis of the dark signals allowed the extraction of important properties such as the dark count rate, the gain, the after-pulse and optical cross-talk (in case of the SiPMs) rates. These parameters have been evaluated as a function of the bias voltage, showing trends perfectly compatible with the theory of the device.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
