The 3D silicon radiation detectors are very promising devices to be used in environments requiring extreme radiation hardness, such as the super-LHC experiment at CERN. A drawback of this detector is the very long and non-standard fabrication process, which makes the mass production of these devices very critical. A possible simplification of the manufacturing process relies on a new type of 3D architecture, called 3D-single-type-column detector, that we have introduced in previous works. In this paper we report on the fabrication process of the first batch of detectors and on selected results from the electrical characterization of 3D test structures, covering leakage current, capacitance and breakdown voltage measurements.
First electrical characterization of 3D detectors with electrodes of the same doping type
Pozza, Alberto;Boscardin, Maurizio;Dalla Betta, Gian Franco;Piemonte, Claudio;Ronchin, Sabina;Zorzi, Nicola
2007-01-01
Abstract
The 3D silicon radiation detectors are very promising devices to be used in environments requiring extreme radiation hardness, such as the super-LHC experiment at CERN. A drawback of this detector is the very long and non-standard fabrication process, which makes the mass production of these devices very critical. A possible simplification of the manufacturing process relies on a new type of 3D architecture, called 3D-single-type-column detector, that we have introduced in previous works. In this paper we report on the fabrication process of the first batch of detectors and on selected results from the electrical characterization of 3D test structures, covering leakage current, capacitance and breakdown voltage measurements.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
