Single walled carbon nanotube (SWCNT) ultrathin films were deposited on n doped Si substrates provided with three electrodes for photoconductive measurements. Without illumination the devices show good rectifier properties and holes mobility in the range 105 cm/V.s which makes very promising for fast switching applications. Measuring the current voltage characteristics of the SWCNT film under illumination, an increase in the device performance is observed when a voltage VG is applied to the third electrode. In particular, increasing VG towards the breakdown region, an increase of more than 10 times is recorded in the photocurrent and in the external quantum efficiency with respect to the values measured at VG=0. The experimental data are interpreted considering a hole doping of the SWCNT film by the action of the third electrode voltage VG.
Increasing efficiency in single walled carbon nanotube/n-Si photodetectors by voltage doping
Crivellari, Michele;Castrucci, Paola
2018-01-01
Abstract
Single walled carbon nanotube (SWCNT) ultrathin films were deposited on n doped Si substrates provided with three electrodes for photoconductive measurements. Without illumination the devices show good rectifier properties and holes mobility in the range 105 cm/V.s which makes very promising for fast switching applications. Measuring the current voltage characteristics of the SWCNT film under illumination, an increase in the device performance is observed when a voltage VG is applied to the third electrode. In particular, increasing VG towards the breakdown region, an increase of more than 10 times is recorded in the photocurrent and in the external quantum efficiency with respect to the values measured at VG=0. The experimental data are interpreted considering a hole doping of the SWCNT film by the action of the third electrode voltage VG.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
