Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p-type and n-type) in a thin-film transistor with a high-performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gain.

Asymmetric Split-Gate Ambipolar Transistor and Its Circuit Application to Complementary Inverter

Ghittorelli, Matteo;
2016-01-01

Abstract

Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p-type and n-type) in a thin-film transistor with a high-performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC gain.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/313218
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