Abstract Sol-gel derived multi-layer ZnO films were prepared by spin coating technique on soda-lime glass, silica, silicon and platinum substrates from an alcoholic solution of zinc acetate dihydrate and monoethanolamine at different synthetic conditions. The curing and annealing conditions for the ZnO films were adjusted based on the study performed on the ZnO xerogel powders. Structural and morphological features as well as the thermal behavior of the samples were investigated by complementary techniques including electron microscopy, Fourier transform infrared spectroscopy, thermogravimetric and differential thermal analyses, and X-ray diffraction analysis. According to the electrical measurements performed on ZnO thin films sandwiched between Pt/Ti/SiO2 substrate and Ag dishes as a top electrode, the selected fabrication conditions were suitable for fulfilling the requirements of active resistive layers for the development of memristive devices.
Sol-gel derived oriented multilayer ZnO thin films with memristive response
Cristian Collini;Leandro Lorenzelli;Valentina Prusakova;
2016-01-01
Abstract
Abstract Sol-gel derived multi-layer ZnO films were prepared by spin coating technique on soda-lime glass, silica, silicon and platinum substrates from an alcoholic solution of zinc acetate dihydrate and monoethanolamine at different synthetic conditions. The curing and annealing conditions for the ZnO films were adjusted based on the study performed on the ZnO xerogel powders. Structural and morphological features as well as the thermal behavior of the samples were investigated by complementary techniques including electron microscopy, Fourier transform infrared spectroscopy, thermogravimetric and differential thermal analyses, and X-ray diffraction analysis. According to the electrical measurements performed on ZnO thin films sandwiched between Pt/Ti/SiO2 substrate and Ag dishes as a top electrode, the selected fabrication conditions were suitable for fulfilling the requirements of active resistive layers for the development of memristive devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.