Ion sensitive field effect transistors (ISFET) are candidates for a newgeneration of fully electricalDNAsensors. To this purpose, we have modified ISFET sensors by adsorbing on their Si3N4 surface poly-l-lysine and single (as well as double) stranded DNA. Once coupled to an accurate model of the oppositely charged layers adsorbed on the surface, the proposed sensor allows quantitatively evaluating the adsorbed molecules densities, as well as estimating DNA hybridization kinetics. © 2006 Published by Elsevier B.V.

A fully electronic sensor for the measurement of cDNA hybridization kinetics

Lorenzelli, Leandro
2007

Abstract

Ion sensitive field effect transistors (ISFET) are candidates for a newgeneration of fully electricalDNAsensors. To this purpose, we have modified ISFET sensors by adsorbing on their Si3N4 surface poly-l-lysine and single (as well as double) stranded DNA. Once coupled to an accurate model of the oppositely charged layers adsorbed on the surface, the proposed sensor allows quantitatively evaluating the adsorbed molecules densities, as well as estimating DNA hybridization kinetics. © 2006 Published by Elsevier B.V.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/30769
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