We propose a simulator model to estimate the performance of digital Silicon Photomultipliers (dSiPM) based on Single Photon Avalanche Diodes (SPADs) in terms of detection rate of photons incident on the sensor. The work provides guidelines for efficient array structure depending on: the number of SPADs, fill factor, area of both SPADs and array. A comparison of the main techniques present in the literature to digitally combine multiple outputs into single channel is included with simulated results showing promising higher detection rates for XOR-based dSiPMs. Mathematical expressions are derived to estimate dSiPM parameters such as maximum detection rate and detector dead time as functions of the mentioned design parameters.

A Simulation Model for Digital Silicon Photomultipliers

Parmesan, Luca;
2016-01-01

Abstract

We propose a simulator model to estimate the performance of digital Silicon Photomultipliers (dSiPM) based on Single Photon Avalanche Diodes (SPADs) in terms of detection rate of photons incident on the sensor. The work provides guidelines for efficient array structure depending on: the number of SPADs, fill factor, area of both SPADs and array. A comparison of the main techniques present in the literature to digitally combine multiple outputs into single channel is included with simulated results showing promising higher detection rates for XOR-based dSiPMs. Mathematical expressions are derived to estimate dSiPM parameters such as maximum detection rate and detector dead time as functions of the mentioned design parameters.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/307561
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