We report on the static and dynamic behavior of BJT-based particle detectors realized on high-resistivity silicon. Several prototypes, featuring different doping profiles and geometries, have been fabricated at ITC-irst (Trento, Italy). These devices have been thoroughly characterized from the electrical viewpoint, and, in order to understand the fundamental parameters of the structure, device simulations have been performed, whose results are in very good agreement with experimental data. Preliminary functional measurements have been carried out by using a 109Cd source excitation.

Characterization of BJT-based particle detectors

Piemonte, Claudio;Boscardin, Maurizio;Dalla Betta, Gian Franco;Gregori, Paolo;Rachevskaia, Irina;Ronchin, Sabina;Zorzi, Nicola
2004

Abstract

We report on the static and dynamic behavior of BJT-based particle detectors realized on high-resistivity silicon. Several prototypes, featuring different doping profiles and geometries, have been fabricated at ITC-irst (Trento, Italy). These devices have been thoroughly characterized from the electrical viewpoint, and, in order to understand the fundamental parameters of the structure, device simulations have been performed, whose results are in very good agreement with experimental data. Preliminary functional measurements have been carried out by using a 109Cd source excitation.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/3072
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