Herein, we report a memristive response from Pt/TiO2/Ta2O5/Pt stack thin films with low SET and RESET voltages, and resistance ratio of 103. For the first time, Pt/TiO2/Ta2O5 stack thin films were produced by sol-gel procedure. The morphology and elemental composition of Pt/TiO2/Ta2O5 stacks were studied by a set of complementary techniques, including scanning electron microscopy (SEM), field-emission electron microscopy (FE-SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The thickness of the material was estimated from the transmittance spectrum by Pointwise Unconstrained Optimization Approach (PUMA).
Towards low voltage resistive switch in sol-gel derived TiO2/Ta2O5 stack thin films
Prusakova, Valentina;Collini, Cristian;Lunelli, Lorenzo;Vanzetti, Lia Emanuela;Chiappini, Andrea;Lorenzelli, Leandro;Pederzolli, Cecilia;Chiasera, Alessandro;Ferrari, Maurizio;
2016-01-01
Abstract
Herein, we report a memristive response from Pt/TiO2/Ta2O5/Pt stack thin films with low SET and RESET voltages, and resistance ratio of 103. For the first time, Pt/TiO2/Ta2O5 stack thin films were produced by sol-gel procedure. The morphology and elemental composition of Pt/TiO2/Ta2O5 stacks were studied by a set of complementary techniques, including scanning electron microscopy (SEM), field-emission electron microscopy (FE-SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The thickness of the material was estimated from the transmittance spectrum by Pointwise Unconstrained Optimization Approach (PUMA).File in questo prodotto:
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