RF-MEMS technology is emerging as a key enabling solution to address demanding requirements that upcoming 5G standards pose upon passive devices and networks. In this letter, we demonstrate experimentally—to the best of our knowledge, for the first time—, RF-MEMS 2-state basic attenuator modules, from nearly dc up to 110 GHz. Physical samples are realized in the CMM-FBK RF-MEMS technology, and design variations are tested. Resistive loads are placed in series or shunt configuration on the RF line, and the attenuation is ON/OFF switched by electrostatically driven MEMS micro-relays. Tested devices show attenuation levels (S21) from −5 to −10 dB, depending on the resistive load, with flatness of 2–3 dB from 10 MHz to 50 GHz and of ∼2 dB from 60 up to 110 GHz. When OFF, the attenuator modules introduce loss (S21) better than −1 dB up to 50 GHz and better than −6 dB up to 110 GHz.

RF-MEMS Technology for 5G: Series and Shunt Attenuator Modules Demonstrated up to 110 GHz

Iannacci, Jacopo;
2016

Abstract

RF-MEMS technology is emerging as a key enabling solution to address demanding requirements that upcoming 5G standards pose upon passive devices and networks. In this letter, we demonstrate experimentally—to the best of our knowledge, for the first time—, RF-MEMS 2-state basic attenuator modules, from nearly dc up to 110 GHz. Physical samples are realized in the CMM-FBK RF-MEMS technology, and design variations are tested. Resistive loads are placed in series or shunt configuration on the RF line, and the attenuation is ON/OFF switched by electrostatically driven MEMS micro-relays. Tested devices show attenuation levels (S21) from −5 to −10 dB, depending on the resistive load, with flatness of 2–3 dB from 10 MHz to 50 GHz and of ∼2 dB from 60 up to 110 GHz. When OFF, the attenuator modules introduce loss (S21) better than −1 dB up to 50 GHz and better than −6 dB up to 110 GHz.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/306235
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