n-p-n bipolar phototransistors have been designed and fabricated on high-resistivity silicon substrates. A technology featuring a double implant for the emitter allowed us to obtain a typical current gain of about 600. The device has been tested with alfa particles from a 239Pu source, beta particles from 90Sr, and X-rays from 241Am using a simple experimental setup, where the detector is directly connected to the oscilloscope. In the case of electrons, pulse heights of 100 mV have been observed, with pulse length of 50 us, measured on a load resistor in series to the emitter. The parameters driving the time performance have been measured, obtaining a good agreement with the electrical model of the device. We report on the functional characterization of the device, in particular the time response, the energy calibration, and the electronic noise measurement.

Functional Characterization of a High-Gain BJT Radiation Detector

Boscardin, Maurizio;Dalla Betta, Gian Franco;Giacomini, Gabriele;Gregori, Paolo;Piemonte, Claudio;Rachevskaia, Irina;Ronchin, Sabina;Zorzi, Nicola
2005-01-01

Abstract

n-p-n bipolar phototransistors have been designed and fabricated on high-resistivity silicon substrates. A technology featuring a double implant for the emitter allowed us to obtain a typical current gain of about 600. The device has been tested with alfa particles from a 239Pu source, beta particles from 90Sr, and X-rays from 241Am using a simple experimental setup, where the detector is directly connected to the oscilloscope. In the case of electrons, pulse heights of 100 mV have been observed, with pulse length of 50 us, measured on a load resistor in series to the emitter. The parameters driving the time performance have been measured, obtaining a good agreement with the electrical model of the device. We report on the functional characterization of the device, in particular the time response, the energy calibration, and the electronic noise measurement.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/3059
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact