Cross-talk characterization results of high-fill-factor single-photon avalanche diode (SPAD) arrays in CMOS 150-nm technology are reported and discussed. Three different SPAD structures were designed with two different sizes (15.6 and 25.6  μm25.6  μm pitch) and three guard ring widths (0.6, 1.1, and 1.6  μm1.6  μm). Each SPAD was implemented in an array, composed of 25 (5×55×5) devices, which can be separately activated. Measurement results show that the average cross-talk probability is well below 1% for the shallow-junction SPAD structure with 15.6  μm15.6  μm pitch and 39.9% fill factor, and 1.45% for the structure with 25.6  μm25.6  μm pitch and 60.6% fill factor. An increase of cross-talk probability with the excess bias volt

Cross-talk characterization of dense single-photon avalanche diode arrays in CMOS 150-nm technology

Xu, Hesong;Pancheri, Lucio;Huf Campos Braga, Leo;Stoppa, David
2016

Abstract

Cross-talk characterization results of high-fill-factor single-photon avalanche diode (SPAD) arrays in CMOS 150-nm technology are reported and discussed. Three different SPAD structures were designed with two different sizes (15.6 and 25.6  μm25.6  μm pitch) and three guard ring widths (0.6, 1.1, and 1.6  μm1.6  μm). Each SPAD was implemented in an array, composed of 25 (5×55×5) devices, which can be separately activated. Measurement results show that the average cross-talk probability is well below 1% for the shallow-junction SPAD structure with 15.6  μm15.6  μm pitch and 39.9% fill factor, and 1.45% for the structure with 25.6  μm25.6  μm pitch and 60.6% fill factor. An increase of cross-talk probability with the excess bias volt
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/304473
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