Radiation hardness of planar detectors processed from pre-irradiated and thermo-annealed n-type FZ silicon substrates, and standard FZ as a reference, was studied. The high purity n-Si wafers with carrier concentration 4.8x1011 cm-3 were pre-irradiated in Kiev’s nuclear research reactor by fast neutrons to fluence of about 1016 neutrons/cm2 and thermo-annealed at a temperature of about 850 1C. Silicon diodes were fabricated from standard and pre-irradiated silicon substrates by IRST (Italy). All diodes were subsequently irradiated by fast neutrons at Kiev and Ljubljana nuclear reactors. The dependence of the effective doping concentration as a function of fluence (Neff = f(F)) was measured for reference and pre-irradiated diodes. Pre-irradiation of silicon improves the radiation hardness by decreasing the acceptor introduction rate (b), thus mitigating the depletion voltage (Vdep) increase. In particular, b in reference samples is about 0.017 cm-1, and for pre-irradiated samples is about 0.008 cm-1. Therefore, the method of preliminary irradiation can be useful to increase the radiation hardness of silicon devices to be used as sensors or detectors in harsh radiation environments.

Radiation hardness of silicon detectors based on pre-irradiated silicon

Boscardin, Maurizio;Zorzi, Nicola;Dalla Betta, Gian Franco;
2006-01-01

Abstract

Radiation hardness of planar detectors processed from pre-irradiated and thermo-annealed n-type FZ silicon substrates, and standard FZ as a reference, was studied. The high purity n-Si wafers with carrier concentration 4.8x1011 cm-3 were pre-irradiated in Kiev’s nuclear research reactor by fast neutrons to fluence of about 1016 neutrons/cm2 and thermo-annealed at a temperature of about 850 1C. Silicon diodes were fabricated from standard and pre-irradiated silicon substrates by IRST (Italy). All diodes were subsequently irradiated by fast neutrons at Kiev and Ljubljana nuclear reactors. The dependence of the effective doping concentration as a function of fluence (Neff = f(F)) was measured for reference and pre-irradiated diodes. Pre-irradiation of silicon improves the radiation hardness by decreasing the acceptor introduction rate (b), thus mitigating the depletion voltage (Vdep) increase. In particular, b in reference samples is about 0.017 cm-1, and for pre-irradiated samples is about 0.008 cm-1. Therefore, the method of preliminary irradiation can be useful to increase the radiation hardness of silicon devices to be used as sensors or detectors in harsh radiation environments.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/3035
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact